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IRF3709ZCS - HEXFET Power MOSFET

Download the IRF3709ZCS datasheet PDF. This datasheet also covers the IRF3709ZCL variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • primarily in Q1. Ploss = (Irms × Rds(on ) ) 2 ⎛ ⎞ ⎛ Qgs 2 Qgd +⎜I× × Vin × f ⎟ + ⎜ I × × Vin × ig ig ⎝ ⎠ ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ f⎟ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3709ZCL_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 30V 6.3m: Qg 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak IRF3709ZCS TO-262 IRF3709ZCL www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 87 62 Units V A c h h 350 79 40 0.
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