IRF2204L
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET
VDSS = 40V
RDS(on) = 3.6mΩ
ID = 170AV
D2Pak IRF2204S
TO-262 IRF2204L
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM...
