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IRF1704 - Power MOSFET

Datasheet Summary

Description

design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of this HEXFET® power MOSFET are fast switching speed and improved repetitive avalanche rating. The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood automotive.

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PD -94012C AUTOMOTIVE MOSFET IRF1704 Benefits l 200°C Operaing Temperature HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 40V l Dynamic dv/dt Rating l Fast Switching l Repetitive Avalanche Allowed G RDS(on) = 0.004Ω up to Tj Max l Automotive Qualified (Q101) ID = 170A† S Description Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET® power MOSFET are fast switching speed and improved repetitive avalanche rating.
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