IRF1010EZSPBF
Features
O O O O O O O
IRF1010EZPb F IRF1010EZSPb F IRF1010EZLPb F
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 60V RDS(on) = 8.5mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
TO-220AB IRF1010EZ
D2Pak IRF1010EZS
TO-262 IRF1010EZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous...
