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IR51HD224 - SELF-OSCILLATING HALF-BRIDGE

Description

The IR51HD224 is a high voltage, high speed, selfoscillating half-bridge.

Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction.

Features

  • n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 1.1Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline o.

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Full PDF Text Transcription

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Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 1.1Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT f = Package Description The IR51HD224 is a high voltage, high speed, selfoscillating half-bridge.
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