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IR2111SPBF - HALF-BRIDGE DRIVER

Description

The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

  • Floating channel designed for bootstrap operation.
  • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set deadtime High side output in phase with input Also available LEAD-FREE Product Summary.

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Full PDF Text Transcription

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Data Sheet No. PD60028-M IR2111(S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set deadtime High side output in phase with input Also available LEAD-FREE Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 200 mA / 420 mA 10 - 20V 750 & 150 ns 650 ns Description Packages The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications.
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