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IR2109 - HALF-BRIDGE DRIVER

Description

The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

  • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune.
  • Gate drive supply range from 10 to 20V.
  • Undervoltage lockout for both channels.
  • 3.3V, 5V and 15V input logic compatible.
  • Cross-conduction prevention logic.
  • Matched propagation delay for both channels.
  • High side output in phase with IN input.
  • Logic and power ground +/- 5V offset.
  • Interna.

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Full PDF Text Transcription

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Data Sheet No. PD60163-U IR2109(4) (S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V, 5V and 15V input logic compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • High side output in phase with IN input • Logic and power ground +/- 5V offset. • Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21094) • Lower di/dt gate driver for better noise immunity • Shut down input turns off both channels. • Available in Lead-Free HALF-BRIDGE DRIVER Product Summary VOFFSET 600V max.
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