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Data Sheet No.PD 60153-J
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
• • • • •
Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500mΩ (max) 50V 2A 1.5µs
Description
The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 2A.
IPS042G Datasheet
