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HF05D060ACE - Hexfred Die

Description

Guaranteed (min, max) Test Conditions VF Forward Voltage Drop BVR Reverse Breakdown Voltage IRM Reverse Leakage Current 0.8V min, 1.05V max 600V min 10µA max IC = 1A, TJ = 25°C TJ = 25°C, IR = 1mA TJ = 25°C, VR = 600V Mechanical Data Nominal Backmetal Composition, (Thickness) Cr (0.1µm)- NiV

Features

  • • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • Benchmark Efficiency for Motor Control.

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PD - 94412A HF05D060ACE Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Excellent Current Sharing in Parallel Operation • Qualified for Industrial Market Hexfred Die in Wafer Form 600V IF(nom)=5A VF(typ)= 1.15V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer Reference Standard IR Package Part: IRGS10B60KD Parameter Electrical Characteristics (Wafer Form) Description Guaranteed (min, max) Test Conditions VF Forward Voltage Drop BVR Reverse Breakdown Voltage IRM Reverse Leakage Current 0.8V min, 1.
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