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G7PH42U-EP Datasheet IRG7PH42U-EP

Manufacturer: International Rectifier (now Infineon)

Overview

INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

  • Low VCE (ON) trench IGBT technology.
  • Low switching losses.
  • Maximum junction temperature 175 °C.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (ON) temperature co-efficient.
  • Tight parameter distribution.
  • Lead -Free Benefits.
  • High efficiency in a wide range of.