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G4BC40F Datasheet IRG4BC40F

Manufacturer: International Rectifier (now Infineon)

Overview

PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

  • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.