FB31N20D
..
PD- 93805B
SMPS MOSFET
IRFB31N20D IRFS31N20D IRFSL31N20D
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.082Ω
31A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB31N20D and Current l
D2Pak IRFS31N20D
TO-262 IRFSL31N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m)
Units
A W W/°C...
