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8GBU - 8.0 Amps Single Phase Full Wave

General Description

of four glass passivated silicon junction connected as a Full Wave Bridge.

These four junctions are encapsulated by plastic molding technique.

Key Features

  • Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P. C. B. High Surge Current Capability High Isolation between terminals and molded case (1500 VRMS) Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved Bridge Rectifier IO(AV) = 8A VRRM = 50/ 1200V.

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www.DataSheet4U.com Bulletin I2719 rev. F 11/02 8GBU Series 8.0 Amps Single Phase Full Wave Features Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 VRMS) Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved Bridge Rectifier IO(AV) = 8A VRRM = 50/ 1200V Description DataSheet4U.com These GBU Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique.