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IFN5911 - Dual Matched N-Channel JFET

Description

The -25V InterFET IFN5911 and IFN 5912 JFET’s are targeted for wideband differential amplifiers.

Gate leakages are less than 10pA at room temperatures.

The TO-78 package is hermetically sealed and suitable for military applications.

Features

  • InterFET N0030L Geometry.
  • Low Noise: 4.0 nV/√Hz Typical.
  • Low Leakage: 10pA Typical.
  • Low Input Capacitance: 5.0 pF Typical.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet Details

Part number IFN5911
Manufacturer InterFET
File Size 288.36 KB
Description Dual Matched N-Channel JFET
Datasheet download datasheet IFN5911 Datasheet

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now IFN5911-2 IFN5911, IFN5912 Dual Matched N-Channel JFET Features • InterFET N0030L Geometry • Low Noise: 4.0 nV/√Hz Typical • Low Leakage: 10pA Typical • Low Input Capacitance: 5.0 pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • VHF Amplifiers • Wideband Differential Amplifiers Description The -25V InterFET IFN5911 and IFN 5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available.
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