IFD89
Features
- Inter FET N0014EU Geometry
- Low Noise: 5 n V/√Hz Typical
- Low Leakage: 2p A Typical
- Low Ciss: 2.3p F Typical
- Ro HS pliant
- SMT, TH, and Bare Die Package options.
Applications
- Hearing Aids
- Mini Microphones
- Infrared Detector Amplifiers
- Battery Powered Amplifiers
- High Gain, Low-Noise Amplifiers
- Replacement for IFND89
Description
The -15V high gain, low noise Inter FET IFND89 es in several package options and is optimized for low power audio applications. The integrated back to back diodes offers clamping and additional gate leakage.
Diode 1 Gate 2 N/C 3
SOT353 (SC70-5) Top View 5 Source
4 Drain
Gate Drain 2 Source
TO-72 Bottom View
3 4 Diode/Case
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Ordering Information Custom Part and Binning Options Available
Part Number
Description
IFD89T72
Through Hole
IFD89SC5
Surface...
