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IFD89 - N-Channel JFET

General Description

The -15V high gain, low noise InterFET IFND89 comes in several package options and is optimized for low power audio applications.

The integrated back to back diodes offers clamping and additional gate leakage.

Key Features

  • InterFET N0014EU Geometry.
  • Low Noise: 5 nV/√Hz Typical.
  • Low Leakage: 2pA Typical.
  • Low Ciss: 2.3pF Typical.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet Details

Part number IFD89
Manufacturer InterFET
File Size 348.55 KB
Description N-Channel JFET
Datasheet download datasheet IFD89 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now IFD89 IFD89 N-Channel JFET with Diodes Features • InterFET N0014EU Geometry • Low Noise: 5 nV/√Hz Typical • Low Leakage: 2pA Typical • Low Ciss: 2.3pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Hearing Aids • Mini Microphones • Infrared Detector Amplifiers • Battery Powered Amplifiers • High Gain, Low-Noise Amplifiers • Replacement for IFND89 Description The -15V high gain, low noise InterFET IFND89 comes in several package options and is optimized for low power audio applications. The integrated back to back diodes offers clamping and additional gate leakage.