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TE28F010 - 1024K (128K x 8) CMOS FLASH MEMORY

Key Features

  •  ±10% VCC Tolerance  Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology  EPROM-Compatible Process Base  High-Volume Manufacturing Experience n JEDEC-Standard Pinouts  32-Pin Plastic Dip  32-Lead PLCC  32-Lead TSOP (See Packaging Spec. , Order #231369) n Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effect.

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Datasheet Details

Part number TE28F010
Manufacturer Intel
File Size 877.52 KB
Description 1024K (128K x 8) CMOS FLASH MEMORY
Datasheet download datasheet TE28F010 Datasheet

Full PDF Text Transcription for TE28F010 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TE28F010. For precise diagrams, and layout, please refer to the original PDF.

E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program...

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Erase n Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n 100,000 Erase/Program Cycles n 12.