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28F016XD - 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

Description

at any time, without notice.

The 28F016XD may contain design defects or errors known as errata.

Current characterized errata are available upon request.

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Features

  • extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage allows the same component to operate at either 3.3V or 5.0V VCC. Programming voltage at 5.0V VPP mi.

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Datasheet Details

Part number 28F016XD
Manufacturer Intel
File Size 1.13 MB
Description 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
Datasheet download datasheet 28F016XD Datasheet

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Other Datasheets by Intel

Part Number Description
28F016XS 16-MBIT (1 MBIT x 16 / 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F016B3 3 Volt Advanced Boot Block Flash Memory
28F016C3 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY
28F016S3 BYTE-WIDE SMART 3 FlashFile MEMORY
28F016S5 BYTE-WIDE SMART 5 FlashFile MEMORY

Full PDF Text Transcription

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E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY n n n n n n n 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 µA Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 µm ETOX™ IV Flash Technology 85 ns Access Time (t RAC)  Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus  RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology  User-Selectable 3.3V or 5V V CC  User-Selectable 5V or 12V V PP 0.
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