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28F640L18 - (28FxxxL18) StrataFlash Wireless Memory

Download the 28F640L18 datasheet PDF. This datasheet also covers the 28F128L18 variant, as both devices belong to the same (28fxxxl18) strataflash wireless memory family and are provided as variant models within a single manufacturer datasheet.

Description

at any time, without notice.

Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter.

Features

  • High performance Read-While-Write/Erase.
  • 85 ns initial access.
  • 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode.
  • 25 ns asynchronous-page mode.
  • 4-, 8-, 16-, and continuous-word burst mode.
  • Burst suspend.
  • Programmable WAIT configuration.
  • Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ).
  • 1.8 V low-power buffered programming at 7 µs/byte (Typ).
  • Architecture.
  • Asymmetricall.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (28F128L18_IntelCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 28F640L18
Manufacturer Intel Corporation
File Size 1.79 MB
Description (28FxxxL18) StrataFlash Wireless Memory
Datasheet download datasheet 28F640L18 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
28F640B3 3 Volt Advanced Boot Block Flash Memory Intel
28F640J3C Strata Flash Memory Intel
28F640J5 5 Volt StrataFlash Memory Intel
28F640W18 1.8V Wireless Flash Memory Intel
28F640W30 Wireless Flash Memory Intel

Other Datasheets by Intel Corporation

Part Number Description
28F640L30 (28FxxxL30) Wireless Memory
28F640C3 3 Volt Advanced+ Boot Block Flash Memory
28F640J3A (28FxxxJ3A) Intel StrataFlash Memory
28F128J3A (28FxxxJ3A) Intel StrataFlash Memory
28F128L18 (28FxxxL18) StrataFlash Wireless Memory

Full PDF Text Transcription

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Intel StrataFlash® Wireless Memory (L18) 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) — 1.
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