IS62WV5128CLL Datasheet PDF - Integrated Silicon Solution 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM Specs

IS62WV5128CLL - 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM

Datasheet Summary

Description

The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Features

High-speed access time: 55ns, 70ns.
CMOS low power operation.
1.5 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
2.5V--3.6V VDD (62WV5128CLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Industrial temperature available.
2 CS Options Available ISSI MARCH 2003 ®.

Datasheet Details

Part number	IS62WV5128CLL
Manufacturer	Integrated Silicon Solution
File Size	102.38 KB
Description	512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
Datasheet	IS62WV5128CLL Datasheet
Additional preview pages of the IS62WV5128CLL datasheet.

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Full PDF Text Transcription

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IS62WV5128CLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation – 1.5 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 2.5V--3.6V VDD (62WV5128CLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • 2 CS Options Available ISSI MARCH 2003 ® DESCRIPTION The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Published: Mar 20, 2006 |