IS62WV51216ALL Datasheet PDF - Integrated Silicon Solution ULTRA LOW POWER CMOS STATIC RAM Specs

IS62WV51216ALL - ULTRA LOW POWER CMOS STATIC RAM

Datasheet Summary

Description

bits.

technology.

Features

High-speed access time: 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
12 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.65V--2.2V VDD (62WV51216ALL).
2.5V--3.6V VDD (62WV51216BLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.

Datasheet Details

Part number	IS62WV51216ALL
Manufacturer	Integrated Silicon Solution
File Size	190.60 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62WV51216ALL Datasheet
Additional preview pages of the IS62WV51216ALL datasheet.

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Full PDF Text Transcription

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IS62WV51216ALL IS62WV51216BLL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2007 FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V VDD (62WV51216ALL) – 2.5V--3.6V VDD (62WV51216BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62WV51216ALL/ IS62WV51216BLL are high- speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

Published: Mar 20, 2006 |