IS45S16800E - 128Mb SYNCHRONOUS DRAM

This page provides the datasheet information for the IS45S16800E, a member of the IS45S81600E 128Mb SYNCHRONOUS DRAM family.

Datasheet Summary

Description

A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Dat

Features

Clock frequency: 166, 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.3V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self R.

Integrated Silicon Solution

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Datasheet Details

Part number	IS45S16800E
Manufacturer	Integrated Silicon Solution
File Size	811.29 KB
Description	128Mb SYNCHRONOUS DRAM
Datasheet	IS45S16800E Datasheet
Additional preview pages of the IS45S16800E datasheet.

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Full PDF Text Transcription

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IS45S81600E IS45S16800E 1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.

Published: Jun 18, 2015 |