IS45S16400F - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Datasheet Summary

Description

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits.

Internally configured as a quad-bank DRAM with a synchronous interface.

Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits.

Features

Clock frequency: 200, 166, 143, 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
Auto refresh (CBR).
4096 refresh cycles every 64 ms (Com, Ind, A1 g.

Integrated Silicon Solution

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Datasheet Details

Part number	IS45S16400F
Manufacturer	Integrated Silicon Solution
File Size	1.03 MB
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet	IS45S16400F Datasheet
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IS42S16400F IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.

Published: Apr 30, 2010 |