IS45S16400E - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Datasheet Summary

Description

A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDq GNDq NC Write Enable Lower Bye, Input/Out

Features

Clock frequency: 166, 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
4096 refresh cycles every 16ms (A2 grade) or 64ms (A1 grade).
Random column a.

Integrated Silicon Solution

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Datasheet Details

Part number	IS45S16400E
Manufacturer	Integrated Silicon Solution
File Size	855.17 KB
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet	IS45S16400E Datasheet
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Full PDF Text Transcription

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IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.

Published: Apr 30, 2010 |