IS42VS83200D - 256-MBIT SYNCHRONOUS DRAM

Datasheet Summary

Description

A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Writ

Features

Clock frequency: 133, 125 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single Power supply: 1.8V + 0.1V.
LVCMOS interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cycles every 16 ms (A2 grade) or 8K refres.

Integrated Silicon Solution

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Datasheet Details

Part number	IS42VS83200D
Manufacturer	Integrated Silicon Solution
File Size	860.56 KB
Description	256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42VS83200D Datasheet
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Full PDF Text Transcription

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IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY 2009 FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 1.8V + 0.

Published: Jul 25, 2016 |