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IS41C85120A - 512K x 8 (4-MBIT) DYNAMIC RAM

Datasheet Summary

Description

The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8bit high-performance CMOS Dynamic Random Access Memory.

Both products offer accelerated cycle access EDO Page Mode.

EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word.

Features

  • TTL compatible inputs and outputs.
  • Refresh Interval: 1024 cycles/16 ms.
  • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply 5V ± 10% (IS41C85120A) 3.3V ± 10% (IS41LV85120A).
  • Lead-free available ISSI APRIL 2005 ® www. DataSheet4U. com.

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Datasheet preview – IS41C85120A

Datasheet Details

Part number IS41C85120A
Manufacturer Integrated Silicon Solution
File Size 160.77 KB
Description 512K x 8 (4-MBIT) DYNAMIC RAM
Datasheet download datasheet IS41C85120A Datasheet
Additional preview pages of the IS41C85120A datasheet.

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Full PDF Text Transcription

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IS41C85120A IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C85120A) 3.3V ± 10% (IS41LV85120A) • Lead-free available ISSI APRIL 2005 ® www.DataSheet4U.com DESCRIPTION The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word.
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