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IS41C85120 - 512K x 8 (4-MBIT) DYNAMIC RAM

Datasheet Summary

Description

® PRELIMINARY INFORMATION SEPTEMBER 2001

Features

  • TTL compatible inputs and outputs.
  • Refresh Interval: 1024 cycles/16 ms.
  • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120).
  • Industrail Temperature Range -40oC to 85oC The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page M.

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Datasheet Details

Part number IS41C85120
Manufacturer Integrated Silicon Solution
File Size 190.69 KB
Description 512K x 8 (4-MBIT) DYNAMIC RAM
Datasheet download datasheet IS41C85120 Datasheet
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IS41C85120 IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com ISSI DESCRIPTION ® PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120) • Industrail Temperature Range -40oC to 85oC The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word.
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