Click to expand full text
IS41C8200 IS41LV8200
2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
www.datasheet4u.com FEATURES
ISSI
DESCRIPTION
®
JUNE 2001
• Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C
The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
IS41C8200 Datasheet
