IS41C44002 Datasheet PDF - Integrated Silicon Solution 4M x 4 (16-MBIT) DYNAMIC RAM Specs

IS41C44002 - 4M x 4 (16-MBIT) DYNAMIC RAM

This page provides the datasheet information for the IS41C44002, a member of the IS41C4400x 4M x 4 (16-MBIT) DYNAMIC RAM family.

Datasheet Summary

Description

CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Features

Extended Data-Out (EDO) Page Mode access cycle.
TTL compatible inputs and outputs.
Refresh Interval:.
2,048 cycles/32 ms.
4,096 cycles/64 ms.
Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
Single power supply:.
5V±10% or 3.3V ± 10%.
Byte Write and Byte Read operation via two CAS.
Industrial temperature range -40°C to 85°C.

Datasheet Details

Part number	IS41C44002
Manufacturer	Integrated Silicon Solution
File Size	193.38 KB
Description	4M x 4 (16-MBIT) DYNAMIC RAM
Datasheet	IS41C44002 Datasheet
Additional preview pages of the IS41C44002 datasheet.

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Full PDF Text Transcription

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IS41C4400X IS41LV4400X SERIES 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE ISSI® www.DataSheet4U.com JUNE, 2001 FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: – 2,048 cycles/32 ms – 4,096 cycles/64 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: – 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Published: Feb 10, 2018 |