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IS41C4100 - 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

This page provides the datasheet information for the IS41C4100, a member of the IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE family.

Datasheet Summary

Description

The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory.

Both products offer accelerated cycle access EDO Page Mode.

EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word.

Features

  • TTL compatible inputs and outputs.
  • Refresh Interval: 1024 cycles/16 ms.
  • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100).
  • Industrail Temperature Range -40oC to 85oC www. DataSheet4U. com ISSI ®.

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Datasheet preview – IS41C4100

Datasheet Details

Part number IS41C4100
Manufacturer Integrated Silicon Solution
File Size 179.45 KB
Description 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet download datasheet IS41C4100 Datasheet
Additional preview pages of the IS41C4100 datasheet.

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Full PDF Text Transcription

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IS41C4100 IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100) • Industrail Temperature Range -40oC to 85oC www.DataSheet4U.com ISSI ® PRELIMINARY INFORMATION SEPTEMBER 2001 DESCRIPTION The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word.
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