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IDT54FCT273AT - FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET

Description

The FCT273T is an octal D flip-flop built using an advanced dual metal CMOS technology.

The FCT273T has eight edge-triggered D-type flipflops with individual D inputs and O outputs.

The common buffered Clock (CP) and Master Reset (MR) inputs load and reset (clear) all flip-flops simultaneously.

Features

  • Std. , A, and C grades.
  • Low input and output leakage ≤1µA (max. ).
  • CMOS power levels.
  • True TTL input and output compatibility:.
  • VOH = 3.3V (typ. ).
  • VOL = 0.3V (typ. ).
  • High Drive outputs (-15mA IOH, 48mA IOL).
  • Meets or exceeds JEDEC standard 18 specifications.
  • Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked).
  • Power off disable outputs permit "live insertion".
  • Available.

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Datasheet Details

Part number IDT54FCT273AT
Manufacturer Integrated Device Technology
File Size 71.70 KB
Description FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET
Datasheet download datasheet IDT54FCT273AT Datasheet

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IDT54FCT273A FAST CMOS OCTAL FLIP-FLOP WITH MASTER RESET
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IDT54FCT273C FAST CMOS OCTAL FLIP-FLOP WITH MASTER RESET
IDT54FCT273CT FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET
IDT54FCT273T FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET

Full PDF Text Transcription

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IDT54/74FCT273T/AT/CT FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET MILITARYANDINDUSTRIALTEMPERATURERANGES FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET IDT54/74FCT273T/AT/CT FEATURES: • Std., A, and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 specifications • Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked) • Power off disable outputs permit "live insertion" • Available in the following packages: – Industrial: SOIC, SSOP, QSOP – Military: CERDIP, LCC DESCRIPTION: The FCT273T is an octal D flip-flop built using an advanced dual metal CMOS technology.
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