ITSN20015P2 - RF Power LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITSN20015P2
Manufacturer	Innogration
File Size	781.93 KB
Description	RF Power LDMOS FET
Datasheet	ITSN20015P2 Datasheet
Additional preview pages of the ITSN20015P2 datasheet.

Product details

Description

The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW.Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.4 18 56 22 60 Typical Performance (O

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Designed for broadband operation.
Excellent ruggedness.
Large Positive and Negative Gate/Source Voltage Range for Improved C.

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Published: Aug 5, 2018 |