AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Version 2.1 2.2
Subjects (major changes since last revision) Change wafer size to 200 mm
Additional basic types L7761M, L7761T, L7761E
Published by Infi
The following content is an automatically extracted verbatim text
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SIGC68T170R3E
IGBT3 Power Chip
Features: 1700V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
SIGC68T170R3E 1700V 50A
Die Size 8.23 x 8.25 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
8.23 x 8.25
4 x ( 2.94 x 2.97 ) 1.18 x 1.09
mm2
67.
SIGC68T170R3E Datasheet
