AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Version
Subjects (major changes since last revision)
2.2 Change wafer size to 200 mm 2.3 Additional basic types L7667N, L7667U, L7667F; new gate pad des
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SIGC57T120R3LE
IGBT3 Power Chip
Features: 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
SIGC57T120R3LE 1200V 50A
Die Size 7.6 x 7.53 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
7.6 x 7.53
4x(2.98 x 2.97) 1.319 x 0.820
mm2
57.
SIGC57T120R3LE Datasheet
