Datasheet4U Logo Datasheet4U.com

SIDC23D120F6 - Fast switching diode

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.0 2.1 Subjects (major changes since last revision) Final data sheet Operating junction and storage temperature Date 11.12.2012 14.05.2013 Pub

Features

  • Recommended for: A.
  • 1200V technology 120 µm chip.
  • power modules and discrete.
  • soft, fast switching devices.
  • low reverse recovery charge C.
  • small temperature coefficient.
  • qualified according to JEDEC for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIDC24D30SIC3 Silicon Carbide Schottky Diode Infineon Technologies AG
SIDC24D60SIC3 Silicon Carbide Schottky Diode Infineon Technologies AG
SIDC05D60SIC3 Silicon Carbide Schottky Diode Infineon Technologies AG
SIDC11D60SIC3 Silicon Carbide Schottky Diode Infineon Technologies AG
SIDC16D60SIC3 Silicon Carbide Schottky Diode Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
SIDC23D120H8 Fast switching diode
SIDC20D60C8 Fast switching diode
SIDC20D65C8 Fast switching diode
SIDC26D60C8 Fast switching diode
SIDC26D65C8 Fast switching diode

Full PDF Text Transcription

Click to expand full text
SIDC23D120F6 Fast switching diode chip in Emitter Controlled Technology Features: Recommended for: A  1200V technology 120 µm chip  power modules and discrete  soft, fast switching devices  low reverse recovery charge C  small temperature coefficient  qualified according to JEDEC for target Applications: applications  SMPS, resonant applications, drives Chip Type SIDC23D120F6 VR IFn 1200V 25A Die Size 3.5 x 6.5 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 3.5 x 6.5 22.75 2.78 x 5.
Published: |