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SIDC130D170H - Fast switching diode

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG A

Features

  • Recommended for:.
  • 1700V technology, Emitter Controlled.
  • power modules Diode 3th generation, 200 µm chip.
  • soft, fast switching C.
  • low reverse recovery charge.

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Full PDF Text Transcription

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SIDC130D170H Fast switching diode A Features: Recommended for:  1700V technology, Emitter Controlled  power modules Diode 3th generation, 200 µm chip  soft, fast switching C  low reverse recovery charge Applications:  small temperature coefficient  resonant applications, drives  Qualified according to JEDEC for target applications Chip Type VR IFn1 ) Die Size Package SIDC130D170H 1700V 235A 16.3 x 8 mm2 sawn on foil 1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 16.3 x 8 130.4 14.28 x 5.
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