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SIDC08D120F6 - Fast switching diode

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Re

Features

  • 1200V EMCON technology 120 µm chip.
  • soft, fast switching This chip is used for:.
  • EUPEC power modules and discrete devices A.
  • low reverse recovery charge.
  • small temperature coefficient.

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Full PDF Text Transcription

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Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching This chip is used for: • EUPEC power modules and discrete devices A • low reverse recovery charge • small temperature coefficient Applications: C • SMPS, resonant applications, drives Chip Type SIDC08D120F6 VR IF 1200V 7A Die Size 2.2 x 3.7 mm2 Package Ordering Code sawn on foil Q67050-A4169A001 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.2 x 3.7 8.14 / 4.73 mm2 2.98 x 1.
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