SGP10N60
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SGP10N60 SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type SGP10N60 SGB10N60 SGW10N60
VCE(sat)
Tj
Package
600V 10A
2.2V
150°C TO-220AB
TO-263AB
TO-247AC
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature
Symbol VCE IC
ICpuls VGE EAS t SC Ptot Tj ,...
