SGB15N120
SGP15N120
Fast IGBT in NPT-technology
- 40% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- SMPS
- NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
SGP15N120 SGW15N120
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SGP15N120 SGB15N120 SGW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg...
