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SAF-C165-L25M - 16-Bit Single-Chip Microcontroller

Download the SAF-C165-L25M datasheet PDF. This datasheet also covers the SAF-C165-LM variant, as both devices belong to the same 16-bit single-chip microcontroller family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb.
  • Free and are RoHS Compliant VDSS 500 V Rating Drain.
  • to.
  • Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate.
  • to.
  • Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22.
  • A114) RMS Isolation Voltage (t = 0.3 sec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SAF-C165-LM-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
SAF-C165-L25M 16-Bit Single-Chip Microcontroller Infineon Technologies AG
SAF-C165-L25F 16-Bit Single-Chip Microcontroller Infineon Technologies AG
SAF-C165-LF 16-Bit Single-Chip Microcontroller Infineon Technologies AG
SAF-C165-LF3V 16-Bit Single-Chip Microcontroller Infineon Technologies AG
SAF-C165-LM 16-Bit Single-Chip Microcontroller Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
SAF-C165-L25F 16-Bit Single-Chip Microcontroller
SAF-C165-LF 16-Bit Single-Chip Microcontroller
SAF-C165-LF3V 16-Bit Single-Chip Microcontroller
SAF-C165-LM 16-Bit Single-Chip Microcontroller
SAF-C165-LM3V 16-Bit Single-Chip Microcontroller

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 10.5 (Note 2) 6.
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