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PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

Features

  • include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 EVM: ƒ = 2.62 GHz 20 EVM: ƒ = 2.68 GHz EVM: ƒ = 2.65 GHz 15 -20 -25 -30 10 -35 5 -40 0 20 25 30 35 40 45 Outp.

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Datasheet Details

Part number PTFA261702E
Manufacturer Infineon
File Size 359.92 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA261702E Datasheet

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Full PDF Text Transcription

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PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 EVM: ƒ = 2.62 GHz 20 EVM: ƒ = 2.68 GHz EVM: ƒ = 2.
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