Full PDF Text Transcription for K40T120 (Reference)
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K40T120. For precise diagrams, and layout, please refer to the original PDF.
FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID =...
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200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode
K40T120 Datasheet
