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ISG0614N06NM5H
MOSFET
OptiMOSTM5Power-Transistor,60V
Features
•SymmetricalHalfBridge •Optimizedforlowvoltagedrivesandbatterypoweredapplications •OptimizedforhighperformanceSMPS •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.6
mΩ
ID
233
A
Qoss
74
nC
QG(0V..