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ISG0613N04NM6H
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
•SymmetricalHalfBridge •Optimizedforlowvoltagedrivesandbatterypoweredapplications •OptimizedforhighperformanceSMPS •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
0.88
mΩ
ID
299
A
Qoss
76
nC
QG(0V..