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ISC079N15NM6 - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public ISC079N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max 7.9 mΩ ID 95 A Qoss 94 nC QG 31 nC Qrr (500A/μs) 66 nC Type/Ordering Code ISC079N15NM6 Package PG‑TDSON‑8 PG‑TDSON‑8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking 079N15N6 Related Links ‑ Datasheet https://www.