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ISC031N08NM6SC - 80V MOSFET

Datasheet Summary

Description

1 Maximum ratings 3 T

Features

  • Dual‑side cooled package with lowest Junction‑top thermal resistance.
  • Optimized for high performance SMPS.
  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC6129‑2‑21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet preview – ISC031N08NM6SC

Datasheet Details

Part number ISC031N08NM6SC
Manufacturer Infineon
File Size 1.07 MB
Description 80V MOSFET
Datasheet download datasheet ISC031N08NM6SC Datasheet
Additional preview pages of the ISC031N08NM6SC datasheet.

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Full PDF Text Transcription

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Public ISC031N08NM6SC Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 80 V Features • Dual‑side cooled package with lowest Junction‑top thermal resistance • Optimized for high performance SMPS • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC6129‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 80 V RDS(on),max 3.1 mΩ ID 145 A Qoss 73 nC QG(0V...
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