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ISC014N08NM6
MOSFET
OptiMOSTM6Power-Transistor,80V
Features
•N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsynchronousrectification •175°Coperatingtemperature •Highavalancheenergyrating
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.45
mΩ
ID
279
A
Qoss
159
nC
QG(0V...