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IRFIZ44NPbF - Power MOSFET

Download the IRFIZ44NPbF datasheet PDF. This datasheet also covers the IRFIZ44N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFIZ44N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFIZ44NPBF HEXFET Power MOSFET International Rectifier
IRFIZ44N Power MOSFET International Rectifier
IRFIZ44N N-Channel MOSFET INCHANGE
IRFIZ44A Power MOSFET Samsung
IRFIZ44A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by Infineon

Part Number Description
IRFIZ44N Power MOSFET
IRFI1310NPBF Power MOSFET
IRFI3205PbF Power MOSFET
IRFI4110GPbF Power MOSFET
IRFI4227PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRFIZ44NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.024 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.