IQE057N10NM6CGSC - MOSFET

Datasheet Summary

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
High avalanche energy rating.
175°C operating temperature.
Optimized for high frequency switching and synchronous rectification.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
MSL 1 classified according to J-STD-020 Product validati.

Infineon

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Datasheet Details

Part number	IQE057N10NM6CGSC
Manufacturer	Infineon
File Size	1.11 MB
Description	MOSFET
Datasheet	IQE057N10NM6CGSC Datasheet
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IQE057N10NM6CGSC MOSFET OptiMOSTM6Power-Transistor,100V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 5.7 mΩ ID 98 A Qoss 48 nC QG(0V...10V) 26 nC Qrr(100A/µs) 37.

Published: Apr 25, 2024 |