IPTC030N12NM3 - MOSFET

Datasheet Summary

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
100% avalanche tested.
Optimized for motor drives and battery powered.

Infineon

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Datasheet Details

Part number	IPTC030N12NM3
Manufacturer	Infineon
File Size	1.58 MB
Description	MOSFET
Datasheet	IPTC030N12NM3 Datasheet
Additional preview pages of the IPTC030N12NM3 datasheet.

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IPTC030N12NM3 MOSFET OptiMOSTM3Power-Transistor,120V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100%avalanchetested •Optimizedformotordrivesandbatterypoweredapplications. •Optimizedfortopsidecooling. •Idealforbatterymanagementswitchapplication •Superiorthermalperformance. •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 3 mΩ ID 238 A Qoss 182 nC QG(0V..

Published: Nov 28, 2024 |