IPT067N20NM6 - 200V MOSFET

Datasheet Summary

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
High avalanche energy rating.
175°C operating temperature.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
MSL 1 classified according to J-STD-020.
100% avalanche tested Product validation Fully qualified according to JEDEC for Indus.

Infineon

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Datasheet Details

Part number	IPT067N20NM6
Manufacturer	Infineon
File Size	1.00 MB
Description	200V MOSFET
Datasheet	IPT067N20NM6 Datasheet
Additional preview pages of the IPT067N20NM6 datasheet.

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Full PDF Text Transcription

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IPT067N20NM6 MOSFET OptiMOSTM6Power-Transistor,200V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 •100%avalanchetested Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 6.

Published: Apr 1, 2024 |